Chemical Formula Tb3Ga5O12
Lattice Parameter a=12.355Å
Growth Method Czocralski
Density 7.13g/cm3
Mohs Hardness 8.0
Melting Point 1725oC
Refractive Index 1.954 at 1064nm
Thermal Conductivity 9.4×10-6oC-1
Verdet Constant 0.12min/Oe.cm at 1064nm
Latest news:
High Resolution Quadrupole Mass Spectrometer
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Blogs
Basic Concepts of Reactive Sputtering
Recycling Technologies Take a Turn for the Better
The influence of sputtering targets on the manufacturing costs and efficiency of CIGS
Obtaining Good Transmission (%T) and Reflection (%R) Measurements
Nodule Formation on Magnetron Sputtering Targets
ZnO-based thin films and light-emitting diodes grown by ALD
News
High Resolution Quadrupole Mass Spectrometer
PGx, Portable Plasma Surface Testing
First Solar Sets CdTe Module Efficiency World Record, Launches Series 3 Black Module
Markus Beck, CTO, Joins Growing Solexant 'Dream Team'
SCHMID Anticipates Strong Incoming Orders for APCVD
Oerlikon Leybold Vacuum to equip state-of-the art display production line
Webcasts
Advanced Reactive Sputtering Process Control Technology and Systems
A Virtual Tour of Applied Materials’ Clean Room
An Introduction to Ion Implantation – Part 2
An Introduction to Ion Implantation - Part 1
The Liquipel Technology Explained
Balance of power delivered to magnetrons in bipolar pulsed sputtering of aluminum oxide in high frequency..