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Webcasts

 

A Virtual Tour of Applied Materials’ Clean Room

posted by VCi News Desk   |  13 Sep 2012

A Virtual Tour of Applied Materials’ Clean Room.

 

An Introduction to Ion Implantation – Part 2

posted by VCi News Desk   |  6 Jun 2012

An introduction to ion implantation by AMAT.

 

An Introduction to Ion Implantation – Part 1

posted by VCi News Desk   |  6 Jun 2012

An introduction to ion implantation by AMAT.

 

The Liquipel Technology Explained

posted by VCi News Desk   |  9 Jan 2012

The LIQUIPEL technology explained.

 

Balance of power delivered to magnetrons in bipolar pulsed sputtering of aluminum oxide in high frequency mode and HIPIMS

posted by Stanislav Kadlec   |  15 Dec 2011

Presented at RSD2011: International Conference on Reactive Sputtering Deposition, December 8-9, 2011 Linköping, Sweden. Bipolar pulsed reactive sputtering is a useful technique for deposition of dielectric films like Al2O3. The power balance of both magnetrons is important, as it can influence both the film thickness homogeneity of and film [...]

 

Trends in Photovoltaics

posted by Peter Borden   |  12 Dec 2011

Trends in Photovoltaics by Dr. Peter Borden. 2011.

 

Smart Windows and Glass Facades: Electrochromic and Thermochromic Coatings and Devices

posted by Claes-Göran Granqvist   |  2 Dec 2011

The weakest part of the building’s energy system is normally its windows and glass facades, which let in too much energy so that cooling is needed or let out too much energy so that heating is needed. The windows and glass facades are required to create indoors-outdoors contact and for [...]

 

Continuous ALD deposition on flexible substrates – towards a roll-to-roll process

posted by David Cameron   |  20 Nov 2011

The application of the ALD process to continuously moving flexible substrates required for a true roll-to-roll process brings with it a number of issues. Some are similar to those in batch ALD but others are new problems due to the need to ensure the separation of precursor gas streams in [...]

 

The Nature of the III-V/Oxide Interface and its Impact on the ALD Growth of High-k Dielectrics for Advanced CMOS

posted by Martyn Pemble   |  21 Oct 2011

III-V materials such as In0.53Ga0.47As are promising candidates for the scaling of n-channel MOS and MOSFET devices beyond the 22 nm node as a result of their high electron mobility. However, problems have been encountered when preparing gate oxide layers on this material resulting from the presence of native oxides [...]

 

High Rate Growth of SiO2 by Thermal ALD Using Tris(di-methylamino)silane and Ozone

posted by Guo Liu   |  10 Aug 2011

High Rate Growth of SiO2 by Thermal ALD Using Tris(di-methylamino)silane and OzoneAtomic layer deposition (ALD) of SiO2 has been explored using a wide variety of precursors ranging from halides to organometalic silanes and silanols. Yet few existing ALD processes for SiO2 are satisfactory. Tris(dimethylamino)silane (TDMAS) is a promising ALD precursor [...]

 
 

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