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Advanced Reactive Sputtering Process Control Technology and Systems
| 17 May 2013
Advanced Reactive Sputtering Process Control Technology and Systems – paper presented at SVC TC 2013.
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A Virtual Tour of Applied Materials’ Clean Room
| 13 Sep 2012
A Virtual Tour of Applied Materials’ Clean Room.
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An Introduction to Ion Implantation – Part 2
| 6 Jun 2012
An introduction to ion implantation by AMAT.
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An Introduction to Ion Implantation – Part 1
| 6 Jun 2012
An introduction to ion implantation by AMAT.
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Balance of power delivered to magnetrons in bipolar pulsed sputtering of aluminum oxide in high frequency mode and HIPIMS
| 15 Dec 2011
Presented at RSD2011: International Conference on Reactive Sputtering Deposition, December 8-9, 2011 Linköping, Sweden. Bipolar pulsed reactive sputtering is a useful technique for deposition of dielectric films like Al2O3. The power balance of both magnetrons is important, as it can influence both the film thickness homogeneity of and film [...]
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Smart Windows and Glass Facades: Electrochromic and Thermochromic Coatings and Devices
| 2 Dec 2011
The weakest part of the building’s energy system is normally its windows and glass facades, which let in too much energy so that cooling is needed or let out too much energy so that heating is needed. The windows and glass facades are required to create indoors-outdoors contact and for [...]
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Continuous ALD deposition on flexible substrates – towards a roll-to-roll process
| 20 Nov 2011
The application of the ALD process to continuously moving flexible substrates required for a true roll-to-roll process brings with it a number of issues. Some are similar to those in batch ALD but others are new problems due to the need to ensure the separation of precursor gas streams in [...]
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The Nature of the III-V/Oxide Interface and its Impact on the ALD Growth of High-k Dielectrics for Advanced CMOS
| 21 Oct 2011
III-V materials such as In0.53Ga0.47As are promising candidates for the scaling of n-channel MOS and MOSFET devices beyond the 22 nm node as a result of their high electron mobility. However, problems have been encountered when preparing gate oxide layers on this material resulting from the presence of native oxides [...]
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